Molecular beam epitaxy grown GaAs-based type-II ‘W’-lasers for O-band applications

We report on the key design factors for the development of Type-II ‘W’-lasers for O-band (1260–1360 nm) applications. We investigate the effects of InGaAs and GaAsSb quantum well composition and thicknesses on the emission wavelength and recombination efficiency as well as of (Al, Ga) As barriers on optimum electrical and optical confinement. Photoluminescence (PL) tests structures and full device structures were fabricated and characterised. 1.25 µm emitting lasers were demonstrated with a threshold current density and J th values of 480 ± 10 A cm−2 at 290 K, whereas 1.3 µm lasers showed an increased J th value of 5.5–7 kA cm−2 at 290 K. The PL test structures exhibited a similar trend with decreasing intensity with increasing wavelength. Gain measurements of the 1.3 µm device demonstrate reasonably low optical losses of 10–15 c m − 1 and a threshold modal gain of ≈25 c m − 1 .