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June 15, 1986Journal of Applied Physics

Doping reaction of PH3 and B2H6 with Si(100)

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Authors

MYMing L. YuPeking UniversityDVD. J. VitkavageMicro Focus (United States)BMB.S. MeyersonJohannes Kepler University of Linz

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Yu et al. (1986) studied this question.

synapsesocial.com/papers/6a8c2c12ac7b7ae706e8cb0fhttps://doi.org/10.1063/1.336708
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture1973 · 121 citations
  2. 2P‐Doped Polysilicon Film Growth Technology1982 · 42 citations
  3. 3Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon System1984 · 95 citations
  4. 4Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon1975 · 258 citations
  5. 5The adsorption of PH3 on Si(100) and its effect on the coadsorption of SiH41984 · 78 citations