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Rapid drilling of vias in thick wafers (381 µm) of GaAs has been achieved by a laser assisted etching process. The technique utilized a cw visible argon ion laser and an etchant gas of low pressure Cl2. Data on the dependence of the etch rate on the laser power, wavelength, and Cl2gas pressure are presented.
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Tucker et al. (1983) studied this question.
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