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The growth of GaAs and III-V alloys by MBE is now a well-established method used to prepare a whole range of devices. One of the advantages of MBE is that the same technology can be used to study the processes controlling growth. This article will discuss the present state of knowledge concerning the growth of binary compounds such as GaAs and of alloys with mixed group III and mixed group V elements. It will also discuss the relation between growth conditions and resulting film properties for binary compounds, alloys, and interfaces.
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C. T. Foxon (1983) studied this question.
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