A photodiode consisting of a p-n junction embedded in an InAs0.09Sb0.91/InSb strained-layer superlattice with equal 130-Å-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.
No takes yet. Share an insight, caveat, or question.
Kurtz et al. (1988) studied this question.