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The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for Ga(x)In(1-x)As thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.
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Jurczak et al. (2015) studied this question.
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