Metal–Organic Vapor Phase Epitaxy of GaN and InGaN Using Triethylamine with Ammonia as a Nitrogen Source

Metal–organic vapor phase epitaxy (MOVPE) of GaN and InGaN was investigated using a combination of triethylamine (TEA) and ammonia (NH 3 ) as the nitrogen source. The reaction of TEA and NH 3 in the gas phase was verified by quadrupole mass spectrometry. By using this nitrogen source, a GaN epitaxial layer was grown at 600 °C with a peak photoluminescence at 375 nm. An In x Ga 1- x N ( x =0.6) eptaxial layer was also grown at 600 °C. The indium to gallium concentration ratio was verified by secondary ion-microprobe mass spectrometry (SIMS) and X-ray diffraction. It is confirmed that this is an effective nitride source for the efficient growth of GaN and InGaN.