Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer

Interfacial As is shown to reduce reverse-bias current in Al–GaAs Schottky barriers. It is suggested that the leakage reduction is associated with the removal of low work function phases at the interface. In addition, current–voltage measurements performed on In0.75Ga0.25As–GaAs heterojunctions indicate a dependence upon the condition of the GaAs prior to deposition of the In0.75Ga0.25As layer.