Answers are grounded in this paper and cite their sources.
Inversion mode, self-aligned-gate, metal-insulator-semiconductor field-effect transistors (MISFET's) have been fabricated on p-type Ga0.47In0.53As epitaxially grown on semi-insulating InP substrates. Ring-oscillator (RO) circuits were designed using enhancement-driver/ enhancement-load-type logic gates. Propagation delay as low as 50 ps was measured in a nine-stage ring oscillator (driver MISFET about 1.2-µm gate length) with a fan-in and fan-out of one. These are believed to be the first results on GaInAs inversion-mode MISFET-based digital integrated circuits.
No takes yet. Share an insight, caveat, or question.
Upadhyayula et al. (1986) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: