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November 1, 1998Japanese Journal of Applied PhysicsOpen Access

New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

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Authors

KOKunishige OeKyoto Institute of TechnologyHOHiroshi OkamotoThe University of Tokyo

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Oe et al. (1998) studied this question.

synapsesocial.com/papers/6a8d728923c3143ce3dcd581https://doi.org/10.1143/jjap.37.l1283
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Also Consider

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  1. 1Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE1998 · 59 citations
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  3. 3InSb1-xBix Films Grown by Molecular Beam Epitaxy1981 · 48 citations