Epitaxial growth of GaN on {1012} oriented sapphire in GaCl/NH3/He and GaCl/NH3/H2 systems

GaN epitaxial layers were grown on {1012} sapphire substrates in the systems GaCl/NH3/He and GaCl/NH3H2, respectively. The films obtained were investigated by light microscopy, RHEED method and electron‐microscopical replica technique. The epitaxial relationship was found to be {1012} // {1120}GaN; 〈1120〉 // 〈1010〉GaN With respect to layer perfection the temperature range of 800 … 1060°C and growth rates ≧ 1 μm/min are the best growth conditions.