Answers are grounded in this paper and cite their sources.
GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.
No takes yet. Share an insight, caveat, or question.
Macksey et al. (1981) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: