Epitaxial growth of silicon assisted by ion implantation

Epitaxial n-type silicon layers were grown on p-type silicon substrates by vacuum deposition combined with silicon ion implantation (PIVD). A dependency of electrical characteristics of Si epitaxial junction on acceleration energy of silicon ions was measured. A location of the interface and a distribution profile of defects were investigated by means of He+ back-scattering technique, and some distance shift of the interface occurred in the case of PIVD.