Ion implantation of Si and Se donors in In0.53Ga0.47As

Ion implantation of Si and Se donors in In0.53Ga0.47As is reported. Both room-temperature and elevated temperature (200 °C) implants are performed. Rapid thermal annealing as well as conventional furnace anneals have been used. Both species yield relatively shallow profiles with peak electron concentrations ∼1×1019 cm−3 and with sheet resistance less than 20 Ω/sq. Our results indicate that elevated temperature implants are effective in reducing implant damage and are important for heavy ions like Se+ to achieve high activation and mobility.