We have used reflection high-energy electron diffraction to investigate the influence of substrate temperature, arsenic pressure, and Al composition on the growth of tilted superlattices(TSLs) on atomically stepped surfaces. In the temperature range of 450–675 °C, we found that GaAs and TSLs grow smoother at high temperatures and low arsenic pressures. In the same range, AlAs grows smoother at low temperatures and high arsenic pressures. We also found that raising the AlAs composition of TSLs raises the substrate temperature required for pure step flow growth. We have also found new evidence that a low-temperature, smooth-surface growth regime for AlGaAs exists below 450 °C.
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Chalmers et al. (1990) studied this question.