Spectroscopic analysis demonstrates chemical-state-selective absorption measurements in thin silicon dioxide on silicon carbide, indicating successful isolation of interface chemical states.
Chemical-state-selective Si K-edge extended X-ray absorption fine structure (EXAFS) measurements of SiO 2 and SiC are demonstrated by detecting bond-specific Auger electrons in SiC coated with a very thin SiO 2 film. Differential-electron-yield (DEY) mode is used for the measurements. Each EXAFS spectrum may be subject to the following two spectrally overlapping influences: (i) the background spectrum formed by energy-losing SiC Auger electrons overlaps the SiO 2 Auger peak, and (ii) the resonant SiO 2 Auger peak overlaps the SiC Auger peak. The SiO 2 - and SiC-selective DEY–EXAFS spectra differ from each other and are similar to the spectra of bulk SiO 2 and SiC, respectively, in the EXAFS regions, indicating that the two influences are negligible, and that this method can be considered valid for selection of chemical states.
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Isomura et al. (2017) studied this question.
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