The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions. Nondimensional curves and examples summarizing typical solutions have been included to illustrate problem solving techniques.
No takes yet. Share an insight, caveat, or question.
Lindsted et al. (1972) studied this question.