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January 1, 1992IEEE Transactions on Electron Devices

Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region

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LVL.K.J. VandammeEindhoven University of TechnologyDRD. RigaudCentre National de la Recherche ScientifiqueJPJean-Marie PeransinUniversité de Montpellier

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Vandamme et al. (1992) studied this question.

synapsesocial.com/papers/6a904b95c7b7d4543f89e333https://doi.org/10.1109/16.158812
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