An ICTS (Isothermal Capacitance Transient Spectroscopy) theory for a system of continuously-distributed gap states is given and experimental data by the ICTS applied to P-doped a-Si:H Schottky barrier diode are presented. It is shown that the ICTS is a useful tool for the study of gap states of a-Si:H whose material parameters are strongly temperature-dependent.
No takes yet. Share an insight, caveat, or question.
Okushi et al. (1981) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: