Donor/acceptor nature of radiation-induced interface traps

The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation.>