Effect of the type of silicon on some fundamental properties of the Si–SiO2 interface

The surface state distribution of dry grown MOS samples depends on the oxygen pressure during annealing. After a low pressure annealing before electrode deposition, the distribution of surface states, as well as their evolution during subsequent low-temperature annealings in the presence of water vapor, depends on the conductivity type of the silicon. A simplified model for the equilibrium of defects in silica at high temperatures allows to explain the behaviour of the doping impurities.