Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs

This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFTs). Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H/sub 2/-diluted phosphorus PIII can promote dopant activation more efficiently during RTA at 600/spl deg/C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFTs resemble those of conventional II doped ones.