CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With ≤ 50-mV/decade Subthreshold Swing

We present a vertical-silicon-nanowire-based p-type tunneling field-effect transistor (TFET) using CMOS-compatible process flow. Following our recently reported n-TFET , a low-temperature dopant segregation technique was employed on the source side to achieve steep dopant gradient, leading to excellent tunneling performance. The fabricated p-TFET devices demonstrate a subthreshold swing (SS) of 30 mV/decade averaged over a decade of drain current and anIon/Ioffratio of >; 105. Moreover, an SS of 50 mV/decade is maintained for three orders of drain current. This demonstration completes the complementary pair of TFETs to implement CMOS-like circuits.