Effect of Back-Gate Bias-Induced Interfaces on the Zero-Temperature-Coefficient in Fully Depleted SOI Transistors

This study investigates the impact of back-gate bias-induced interfaces on the zero-temperature-coefficient (ZTC) point in fully depleted SOI transistors, revealing its fundamental mechanism through mutual compensation between threshold voltage (V ₜₕ ) shifts and interface-affected carrier mobility. Experimental results demonstrate that the ZTC point systematically tracks Vth modulation and interface effects with varying Vgb. Notably, positive Vgb significantly narrows the gap between ZTC and Vth, as the dominant conduction channel shifts toward the high-quality bottom interface with minimal interface states influence.