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In y Ga 1- y As 1- x Bi x layers on InP:Fe (100) substrates have been grown by molecular beam epitaxy. Up to 7% of Bi incorporation has been confirmed by optical and structural analyses of grown samples. Photoluminescence signals at wavelengths up to 3 µm have been observed, implying In y Ga 1- y As 1- x Bi x to be a prospective material for mid-infrared applications. A weak band-gap temperature sensitivity of Bi-containing InGaAs has been evaluated from optical absorption measurements.
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Devenson et al. (2012) studied this question.
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