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September 1, 2003IEEE Journal of Solid-State Circuits

SiGe differential transimpedance amplifier with 50-GHz bandwidth

J. S. Weiner A. Leven Vincent Houtsma Y. Baeyens Young-Kai Chen P. Paschke Yang Yang J. Frackoviak Wei-Jer Sung A. Tate R. Reyes R. F. Kopf Nils Weimann

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Abstract

InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-/spl Omega/ transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA//spl radic/Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-/spl Omega/ transimpedance and 49-GHz bandwidth.

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Weiner et al. (2003) studied this question.

synapsesocial.com/papers/6a9126ab54f9004c52e1c472 https://doi.org/10.1109/jssc.2003.815969

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