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We report the design, fabrication, and characterization of resonant microwave circuits integrated with InGaAs/InP modified unitravelling-carrier photodiodes. The photodiodes were flip-chip bonded on AlN substrates with coplanar waveguide circuits. The RF output power levels of 23 and 21.6 dBm at 20 GHz are demonstrated for microwave open stubs and shorted stubs, respectively.
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Li et al. (2014) studied this question.
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