Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 1, 1986IEEE Transactions on Electron Devices

A 30-ps Si bipolar IC using super self-aligned process technology

View Full Paper
Ask AI
Bookmark
Share

Authors

SKS. KonakaTokushima UniversityY. YamamotoY. YamamotoKanazawa UniversityTST. SakaiTokyo Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Konaka et al. (1986) studied this question.

synapsesocial.com/papers/6a9128e59732cc92acd2c231https://doi.org/10.1109/t-ed.1986.22523
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A bipolar monolithic multigigabit/s decision circuit1984 · 29 citations
  2. 2Gigabit logic bipolar technology: advanced super self-aligned process technology1983 · 106 citations
  3. 3Performance limitations of silicon bipolar transistors1979 · 11 citations
  4. 4Preparation of Low-Reflectivity Amorphous Silicon Using DC Magnetron Sputtering1984 · 6 citations
  5. 5A 9-GHz frequency divider using Si bipolar super self-aligned process technology1985 · 45 citations