A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD

A new transverse-mode stabilizing self-aligned structure for (GaAl)As laser diodes by metal organic chemical vapor deposition (MOCVD) is developed. This structure is characterized by an n-GaAs layer grown selectively outside of a mesa stripe using an SiO2 mask. To control the distance between active and n-GaAs layers a highly selective (GaAl)As etching technique by boiled HCl is used. Furthermore, the laser diodes can operate in the fundamental transverse-mode at light output power up to 70 mW with a threshold current of 60 mA under CW operation at lasing wavelengths of 750–760 nm.