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A method for developing a reference voltage in CMOS integrated circuits is described. The circuit uses MOS devices operating in the weak inversion region, as well as a bipolar device formed without process modifications. A brief description of this region of operation is given. Then, the principle of the suggested voltage reference is explained and the final implementation is presented. Higher order effects are discussed, and results from an integrated prototype given.
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Tsividis et al. (1978) studied this question.
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