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An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a strain-compensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 µm.
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Chen et al. (2006) studied this question.
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