Answers are grounded in this paper and cite their sources.
A low-energy oxygen ion beam with energy below 100 eV has been applied to the oxidation of unheated silicon substrates. Ultrathin (∼45 Å) FET-gate-quality oxides have been produced for the first time at room temperature using this technique. The high electrical quality of the oxides is demonstrated by the successful fabrication of n-channel MOSFET's.
No takes yet. Share an insight, caveat, or question.
Todorov et al. (1986) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: