We have carried out a systematic study of on-state breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turned on, the breakdown voltage limiting mechanism changes from a TFE-dominated process to a multiplication-dominated process. This physical understanding allows the creation of a phenomenological physical model for breakdown which agrees well with all our experimental results, and explains the relationship between BV/sub on/ and the sheet carrier concentration. Our results suggest that depending on device design, either on-state or off-state breakdown can limit maximum power.
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Somerville et al. (1999) studied this question.
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