Induced Back-Gate Noise in FDSOI MOSFET

Complete MOSFET noise models include a drain-noise current and an induced gate-noise current in addition to thermal noises associated with parasitic resistances and shot noises associated with parasitic diodes and leakage currents. The induced gate noise is attributed to the thermal noise generated in the conducting channel that capacitively couples to the gate terminal. In an FDSOI process, the back-gate terminal also exhibits capacitive coupling to the ultra-thin-body silicon channel thereby giving rise to induced back-gate noise. This brief demonstrates the derivation of drain, front-gate, and back-gate noise currents that form a complete noise model of an intrinsic FDSOI MOSFET.