This paper presents a new CMOS compatible SOI gated varactor for use in RF ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploit the three-terminal property is also reported.
No takes yet. Share an insight, caveat, or question.
Hui et al. (2001) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: