Answers are grounded in this paper and cite their sources.
High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 /spl deg/C N/sub 2/ annealing. Compared with HfO/sub 2/ films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.
No takes yet. Share an insight, caveat, or question.
Choi et al. (2003) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: