What question did this study set out to answer?

Develop high-performance, air-stable top-gate p-channel WSe2 field-effect transistors by introducing a protective fluoropolymer buffer layer beneath a high-k gate oxide.

October 23, 2015Advanced Functional Materials

High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe2 Field‐Effect Transistor with Fluoropolymer Buffer Layer

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Authors

SSSeyed Hossein Hosseini ShokouhTieto (Finland)PJPyo Jin JeonYonsei University APAtiye PezeshkiInstitut National de la Recherche Scientifique

Discussion

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Implication

Experimental study demonstrates high hole mobility and air stability in top-gate p-channel WSe2 transistors using a fluoropolymer buffer, highlighting pathways for 2D electronic integration.

Key Points

Develop high-performance, air-stable top-gate p-channel WSe2 field-effect transistors by introducing a protective fluoropolymer buffer layer beneath a high-k gate oxide.
Deposited a thin fluoropolymer (Cytop) buffer layer to shield 2D p-channel WSe2 flakes from degradation during high-k Al2O3 gate oxide deposition.
Fabricated top-gate-patterned WSe2 field-effect transistors on glass substrates.
Tested electrical parameters and evaluated ambient air stability at 45% relative humidity over a 7-day period.
Achieved a high hole mobility of 100 cm² V⁻¹ s⁻¹ and an ION/IOFF ratio exceeding 10⁷ at a gate voltage of approximately −4 V and a drain voltage of −1 V.
Maintained robust device stability in ambient air with 45% relative humidity for 7 days post-fabrication.

Cite This Study

Shokouh et al. (2015) studied this question.

synapsesocial.com/papers/6a91908302254b6155dd56fe https://doi.org/10.1002/adfm.201502008

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October 23, 2015Advanced Functional Materials

High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe2 Field‐Effect Transistor with Fluoropolymer Buffer Layer

View Full Paper

Ask AI

Bookmark

Authors

SSSeyed Hossein Hosseini ShokouhTieto (Finland)PJPyo Jin JeonYonsei University APAtiye PezeshkiInstitut National de la Recherche Scientifique

Discussion

Member takes

Implication

Experimental study demonstrates high hole mobility and air stability in top-gate p-channel WSe2 transistors using a fluoropolymer buffer, highlighting pathways for 2D electronic integration.

Key Points

Develop high-performance, air-stable top-gate p-channel WSe2 field-effect transistors by introducing a protective fluoropolymer buffer layer beneath a high-k gate oxide.
Deposited a thin fluoropolymer (Cytop) buffer layer to shield 2D p-channel WSe2 flakes from degradation during high-k Al2O3 gate oxide deposition.
Fabricated top-gate-patterned WSe2 field-effect transistors on glass substrates.
Tested electrical parameters and evaluated ambient air stability at 45% relative humidity over a 7-day period.
Achieved a high hole mobility of 100 cm² V⁻¹ s⁻¹ and an ION/IOFF ratio exceeding 10⁷ at a gate voltage of approximately −4 V and a drain voltage of −1 V.
Maintained robust device stability in ambient air with 45% relative humidity for 7 days post-fabrication.

Cite This Study

Shokouh et al. (2015) studied this question.

synapsesocial.com/papers/6a91908302254b6155dd56fe https://doi.org/10.1002/adfm.201502008

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