Highly (001)-Textured L10FePt–SiO2–C Films with Well-Isolated Small Grains Using TiON Intermediate Layer

The magnetic properties and microstructures of the FePt–SiO 2 –C films deposited on TiON layers were investigated. It was found that the surface energy could be reduced and/or interfacial energy could be increased by doping O into the TiN layers. Improved grain isolation and grain size reduction were achieved with a TiON intermediate layer. The highly (001)-textured FePt–SiO 2 –C films and in-plane hysteresis loops with small openings were retained with the TiON layers. With a TiON/TiN dual intermediate layer, the in-plane hysteresis loop became the ideal straight line. Well-isolated grains with a size of 5.7±0.9 nm was obtained on the TiON/TiN dual intermediate layer.