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An anomalous reduction in the photoquenching efficiency at 80 K has been observed in some semi-insulating GaAs samples during illumination with 1.1-eV light. The effect has been observed in photocurrent and infrared-absorption quenching experiments. Photoluminescence experiments on normal and anomalous samples indicate that the effects are produced by the presence of oxygen as indicated by the photoluminescence emission from the oxygen-related deep donor ELO. Oxygen was found to produce a photoassisted thermal-recovery effect with 1.1-eV light that competes with the EL2 photoquenching effect. No infrared absorption was found that could be attributed directly to ELO. In contrast, the photocurrent was found to be dominated by photoionization of ELO rather than EL2, and the anomalous effect is attributed to the reduced photoquenching temperature of ELO.
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Mitchel et al. (1989) studied this question.
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