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Results on the electrical resistivity, the stress, and the etching behavior of TaSi2films evaporated under various residual gas conditions, and the correlations to changes in the crystalline structure as determined by X-ray diffractometer measurements, are presented. The influence of substrate temperature on the behavior of the evaporated TaSi2films is discussed. For low substrate temperatures, evaporated TaSi2films are compared to RF sputtered films. The results show that the deposition conditions have to be carefully controlled to ensure high-quality TaSi2films.
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Neppl et al. (1982) studied this question.
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