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March 1, 1990Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Molecular-beam epitaxial growth of metastable Ge1−xSnx alloys

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Authors

JPJ. PiaoEpitaxial Technologies (United States)RBR. BeresfordBrown UniversityTLThomas J. LicataIBM (United States)

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Cite This Study

Piao et al. (1990) studied this question.

synapsesocial.com/papers/6a928f13fa60aefc093ab63fhttps://doi.org/10.1116/1.584814
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