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August 28, 1997Electronics Letters

AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavitylasers with very low thresholds

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Authors

JKJ. KoPohang University of Science and TechnologyEHE.R. HegblomLumentum (United States)YAYuliya AkulovaIntel (United States)

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Ko et al. (1997) studied this question.

synapsesocial.com/papers/6a929c70915bce628c4f47dbhttps://doi.org/10.1049/el:19971037
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Also Consider

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  2. 2Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well1991 · 39 citations
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  4. 4Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors1996 · 99 citations
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