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Hydrogenated amorphous silicon films were deposited by microwave electron-cyclotron-resonance plasma CVD technique using pure mono silane gas without intentional substrate heating. A high photoconductivity value of 10-6∼10-5(Ω·cm)-1 under simulated AM1 (100mW/cm2) illumination was obtained for the as-grown films with optical gaps of ∼2.1 eV. Localized tail states estimated from optical absorption measurements are discussed with the characteristics of the films.
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Kitagawa et al. (1987) studied this question.
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