High current post-hydrogenated chemical vapor deposited amorphous silicon p-i-n diodes

Amorphous silicon p-i-n diodes have been fabricated for the first time by chemical vapor deposition and post-hydrogenation in a hydrogen plasma. By analyzing the current-voltage characteristics we obtain current densities up to 50 A/cm2 and rectification ratios better than 107 for 3-V applied bias. A characteristic reversible breakdown voltage is observed up to voltages of ∼20 V. These results are compared with those obtained on amorphous silicon p-i-n diodes prepared by glow discharge decomposition of SiH4.