Ultraviolet photoemission spectroscopy has been used to study the valence-band offsets at GaInAs/InP and InP/GaInAs heterostructures grown by metalorganic molecular-beam epitaxy. High-resolution In-4d/Ga-3d core levels were used. The measured values are 440±50 meV for the ‘‘direct’’ (GaInAs grown on InP) interface and 260±50 meV for the ‘‘inverse’’ interface. This band-offset asymmetry is attributed to a difference in the chemical natures of the two interfaces, deduced from the detailed analysis of the core-level spectra.
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Landesman et al. (1992) studied this question.
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