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Two thresholds are relevant for the mechanism of impact excitation in thin film ELD's: The field strength Et at which tunnel emission from the interface states (IS interface of the MISIM structure) starts and the field Ea, above which electrons are loss-free (ballistically) accelerated. It was previously shown, that Al2O3-ZnS:Mn-Al2O3 implement the case Et > Ea – every tunnel-emitted electron immediately becomes hot. Replacing ZnS by ZnSe in otherwise identical structures reverses the relation (Ea > Et) – rather cold electrons are transferred. The experimental verification is twofold, by (time-averaged) efficiency measurements and by the time resolved behaviour of current and brightness within one (every) excitation period.
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Mach et al. (1984) studied this question.
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