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It has previously been shown that the hydrogen induced drift problems of palladium-gate metal-oxide-semiconductor hydrogen sensors can be eliminated. This was achieved through the introduction of a thin thermally oxidized alumina layer between the Pd metal gate and the silicon dioxide. We show that sputtered metal oxides such as alumina, tantalum pentoxide, and LPCVD silicon nitride have similar effects on the hydrogen induced drift.
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Dobos et al. (1984) studied this question.
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