Oxidation kinetics are reported for thin films of TiN, both directly exposed to a dry oxygen ambient and beneath polycrystalline Pt films of ∼100 nm thickness. Oxygen resonance backscattering spectrometry was used to detect thin oxide layers at the Pt/TiN interface produced by oxidation annealing at 550–650 °C. A linear oxidation rate law was observed for the buried TiN film, indicating the oxidation rate is independent of average titanium oxide thickness. The linear rate constant had an activation enthalpy of 2.4±0.1 eV.
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McIntyre et al. (1997) studied this question.
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