Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous Si

The electronic effects and stress effects for epitaxial regrowth rate enhancement in ion-implanted Si were investigated. By co-doping B and Ge into Si layers at the same time, the strain field introduced by these impurities in Si can be compensated. Significantly enhanced regrowth rates were obtained in B-Ge co-doped and stress-free Si samples. In contrast, only a slight increase in regrowth rate was observed in the strained Si samples doped only with Ge. These results lead us to conclude that the regrowth rate enhancement of ion-implanted Si is due mainly to the electronic effects.