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Regrowth kinetics of amorphous Si layers formed by implanting 75Ge ions to concentrations of about 0.5 at % into <100> Si are obtained by using 1.5 MeV 4He backscattering and channeling measurements. The growth of epitaxial Si is linear in time with an activation energy that coincides with that obtained on 28Si implanted-amorphous Si. The Ge atoms occupy substitutional sites in the regrown layer.
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Révész et al. (1979) studied this question.
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